K2698B K2698B K2698B K2698B rev.a aug.2010 copyright@winsemi microelectronics co., ltd., all right reserved. silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 18a,500v,r ds(on) (max0.27 ? )@v gs =10v ultra-low gate charge(typical 42nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe,vdmos technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially wellsuited for ac-dc switching power supplies, dc-dc power converters high voltage h-bridge motor drive pwm absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 18 a continuous drain current(@tc=100 ) 12.7 a i dm drain current pulsed (note1) 80 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 330 mj e ar repetitive avalanche energy (note1) 27.7 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 208 w t j junction temperature 150 t stg storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.60 /w r qja thermal resistance , junction-to -ambient - - 40 /w
K2698B K2698B K2698B K2698B 2 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 25 v,v ds =0v - - 10 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 10 0 a drain -source breakdown voltage v (br)dss i d = 10 m a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds =10v,i d = 1m a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 9 a - 0.23 0.27 ? forward transconductance gfs v ds = 40 v,i d = 9 a - 16 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2530 3290 pf reverse transfer capacitance c rss - 11 14.3 output capacitance c oss - 300 390 switching time rise time tr v dd = 250 v, i d = 18 a r g = 25 ? (note4,5) - 40 90 ns turn-on time ton - 150 310 fall time tf - 95 200 turn-off time toff - 110 230 total gate charge(gate-source plus gate-drain) qg v dd = 400 v, v gs =10v, i d = 18 a (note 4 ,5) - 42 55 nc gate-source charge qgs - 12 - gate-drain("miller") charge qgd - 14 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 18 a pulse drain reverse current i drp - - - 72 a forward voltage(diode) v dsf i dr = 18 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 18 a,v gs =0v, di dr / dt =100 a / s - 500 - ns reverse recovery charge qrr - 5.4 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 5.2 mh i as = 18 a,v dd = 50 v,r g = 25 ? ,starting t j =25 3.i sd 18 a,di/dt 200a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
K2698B K2698B K2698B K2698B 3 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 fig.1 fig.1 fig.1 on on on on state state state state characteristics characteristics characteristics characteristics fig.2 fig.2 fig.2 fig.2 transfer transfer transfer transfer current current current current characteristics characteristics characteristics characteristics fig.3 fig.3 fig.3 fig.3 on-resistance on-resistance on-resistance on-resistance variation variation variation variation vs vs vs vs drain drain drain drain current current current current fig.4 fig.4 fig.4 fig.4 body body body body diode diode diode diode forward forward forward forward voltage voltage voltage voltage variation variation variation variation with with with with source source source source current current current current and and and and temperature temperature temperature temperature fig.5 fig.5 fig.5 fig.5 capacitance capacitance capacitance capacitance characteristics characteristics characteristics characteristics fig.6 fig.6 fig.6 fig.6 gate gate gate gate charge charge charge charge characteristics characteristics characteristics characteristics
K2698B K2698B K2698B K2698B 4 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. fig. fig. fig. 11 11 11 11 transient transient transient transient thermal thermal thermal thermal response response response response curve curve curve curve fig.7 fig.7 fig.7 fig.7 breakdown breakdown breakdown breakdown voltage voltage voltage voltage variation variation variation variation fig.8 fig.8 fig.8 fig.8 on-resistance on-resistance on-resistance on-resistance variation variation variation variation vs.temperature vs.temperature vs.temperature vs.temperature fig.9 fig.9 fig.9 fig.9 maximum maximum maximum maximum safe safe safe safe operation operation operation operation area area area area fig.10 fig.10 fig.10 fig.10 maximum maximum maximum maximum drain drain drain drain current current current current vs vs vs vs case case case case temperature temperature temperature temperature
K2698B K2698B K2698B K2698B 5 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 fig.1 fig.1 fig.1 2 2 2 2 gate gate gate gate test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.1 fig.1 fig.1 fig.1 3 3 3 3 resistive resistive resistive resistive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform fig.1 fig.1 fig.1 fig.1 4 4 4 4 unclamped unclamped unclamped unclamped inductive inductive inductive inductive switching switching switching switching test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
K2698B K2698B K2698B K2698B 6 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 fig.1 fig.1 fig.1 5 5 5 5 peak peak peak peak diode diode diode diode recovery recovery recovery recovery dv/dt dv/dt dv/dt dv/dt test test test test circuit circuit circuit circuit & & & & waveform waveform waveform waveform
K2698B K2698B K2698B K2698B 7 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to- to- to- to- 3pb 3pb 3pb 3pb package package package package dimension dimension dimension dimension unit:mm
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